Effect of coherent strain on hydrogenic acceptor levels in InyGa1−yAs/AlxGa1−xAs quantum well structures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.103977
Reference7 articles.
1. Shallow impurities in semiconductor quantum wells
2. Binding energy of shallow acceptors inInxGa1−xAsGaAsstrained quantum wells
3. Acceptor and exciton states in strained quantum wells
4. Motion of Electrons and Holes in Perturbed Periodic Fields
5. Band structure and charge control studies ofn‐ andp‐type pseudomorphic modulation‐doped field‐effect transistors
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1. Comprehension of peculiar local emission behavior of InGaAs quantum well by colocalized nanocharacterization combining cathodoluminescence and electron microscopy techniques;Journal of Vacuum Science & Technology B;2018-07
2. Effects of indium concentration on the electronic structures of Be acceptors confined inInxGa1−xAs/Al0.3Ga0.7Asquantum-well structures;Physical Review B;2000-08-15
3. Photoluminescence characterization of biaxial tensile strained GaAs;Journal of Applied Physics;1997-11-15
4. Acceptor level energies as a probe for the effect of strain on valence band structure in molecular-beam epitaxy grown strained semiconductors;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1992-03
5. Electric‐field dependence of acceptor‐level binding energies in strained SiGe and InGaAs quantum‐well structures;Journal of Applied Physics;1992-02-15
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