Optical transitions of InAs/GaAs quantum dot under annealing process
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4717952
Reference20 articles.
1. Post-growth thermal treatment of self-assembled InAs/GaAs quantum dots
2. Effects of alloy intermixing on the lateral confinement potential in InAs∕GaAs self-assembled quantum dots probed by intersublevel absorption spectroscopy
3. Laser-induced InAs/GaAs quantum dot intermixing
4. Intermixing in quantum-dot ensembles with sharp adjustable shells
5. Inhomogeneous broadening in quantum dots with ternary aluminum alloys
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1. Research on the photoluminescence of spectral broadening by rapid thermal annealing on InAs/GaAs quantum dots;Journal of Semiconductors;2020-12-01
2. An Analytical Approach to Study Annealing Induced Interdiffusion of In and Ga for Truncated Pyramidal InAs/GaAs Quantum Dots;IEEE Transactions on Nanotechnology;2020
3. Effect of Thermal Annealing on Absorption and Hole Escape Processes in Type II GaSb/GaAs Quantum Dots: Implications for Solar Cell Design;IEEE Journal of Photovoltaics;2019-07
4. Contribution of a single quantum dots layer in intermediate band solar cells: A capacitance analysis;Solar Energy Materials and Solar Cells;2017-01
5. II–VI colloidal quantum-dot/quantum-rod heterostructures under electric field effect and their energy transfer rate to graphene;Journal of Applied Physics;2016-11-28
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