Thermal growth of silicon oxynitride films on Si: A reaction-diffusion approach
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1639139
Reference17 articles.
1. Self-Consistent Mosfet Tunneling Simulations—Trends in the Gate and Substrate Currents and the Drain-Current Turnaround Effect with Oxide Scaling
2. Alternative dielectrics to silicon dioxide for memory and logic devices
3. High-κ gate dielectrics: Current status and materials properties considerations
4. Ultrathin (<4 nm) SiO2 and Si–O–N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits
5. Spontaneous N Incorporation onto a Si(100) Surface
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1. Effects of temperature and pressure in oxynitridation kinetics on Si(100) with N 2 O gas;Materials Science in Semiconductor Processing;2017-11
2. Modelling of silicon oxynitridation by nitrous oxide using the reaction rate approach;Journal of Applied Physics;2013-12-14
3. Effects of film reoxidation on the growth and material properties of ultrathin dielectrics grown by rapid thermal nitridation in ammonia;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2008
4. Modification of the Oxide/Semiconductor Interface by High Temperature NO Treatments: A Combined EPR, NRA and XPS Study on Oxidized Porous and Bulk n-Type 4H-SiC;Materials Science Forum;2005-05
5. Reactions of Silicon Atoms with NO. Experimental and Theoretical Characterization of Molecules Containing Si, N, and O;The Journal of Physical Chemistry A;2004-10-09
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