Effects of NH3nitridation on oxides grown in pure N2O ambient
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.111701
Reference12 articles.
1. Electrical and physical properties of ultrathin reoxidized nitrided oxides prepared by rapid thermal processing
2. Novel N/sub 2/O-oxynitridation technology for forming highly reliable EEPROM tunnel oxide films
3. MOS characteristics of NH/sub 3/-nitrided N/sub 2/O-grown oxides
4. Low-temperature furnace-grown reoxidized nitrided oxide gate dielectrics as a barrier to boron penetration
5. Channel hot-carrier stressing of reoxidized nitrided oxide p-MOSFETs
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