Theoretical investigation into negative differential resistance characteristics of resonant tunneling diodes based on lattice-matched and polarization-matched AlInN/GaN heterostructures-Reference-Cited by-同舟云学术

Theoretical investigation into negative differential resistance characteristics of resonant tunneling diodes based on lattice-matched and polarization-matched AlInN/GaN heterostructures

Published:2018-01-28 Issue:4 Volume:123 Page:045702
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Rong Taotao¹,Yang Lin-An¹,Yang Lin¹,Hao Yue¹

Affiliation:

1. State Key Discipline Laboratory of Wide Band-gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China

Funder

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5009397

Reference36 articles.

1. Tunneling in a finite superlattice

2. Systematic experimental and theoretical investigation of intersubband absorption inGaN∕AlNquantum wells

3. AlN/GaN double-barrier resonant tunneling diodes grown by metal-organic chemical vapor deposition

4. Investigation of the negative differential resistance reproducibility in AlN/GaN double-barrier resonant tunnelling diodes

5. Origin of the electrical instabilities in GaN/AlGaN double-barrier structure

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