Monte Carlo simulations of spin transport in a strained nanoscale InGaAs field effect transistor-Reference-Cited by-同舟云学术

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Monte Carlo simulations of spin transport in a strained nanoscale InGaAs field effect transistor

Published:2017-12-14 Issue:22 Volume:122 Page:223903
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Thorpe B.¹,Kalna K.²,Langbein F. C.³^ORCID,Schirmer S.¹^ORCID

Affiliation:

1. Department of Physics, College of Science, Swansea University, Singleton Park, Swansea SA2 8PP, United Kingdom

2. College of Engineering, Swansea University, Bay Campus, Fabian Way, Swansea SA1 8EN, United Kingdom

3. School of Computer Science and Informatics, Cardiff University, 5 The Parade, Cardiff CF24 3AA, United Kingdom

Funder

Ser Cymru National Research Network (Wales)

Royal Society

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4994148

Reference50 articles.

1. Quantum Spintronics: Engineering and Manipulating Atom-Like Spins in Semiconductors

2. Spintronics: A Spin-Based Electronics Vision for the Future

3. Electronic analog of the electro‐optic modulator

4. Gate-induced spin precession in an In0.53Ga0.47As two dimensional electron gas

5. Monte Carlo study of spin relaxation in AlGaAs/GaAs quantum wells

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Superior spin transport properties based on VS₂ and VCl₂ ferromagnetic monolayers;Journal of Applied Physics;2022-12-07

2. Monte Carlo simulations of spin transport in nanoscale In0.7Ga0.3As transistors: temperature and size effects;Semiconductor Science and Technology;2022-05-31

3. Thermal characteristic of dark resistivity of InGaAs photoconductive semiconductor switches;Journal of Materials Science: Materials in Electronics;2019-07-20

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