Monte Carlo simulations of spin transport in nanoscale In0.7Ga0.3As transistors: temperature and size effects

Abstract

Abstract Spin-based metal-oxide-semiconductor field-effect transistors (MOSFETs) with a high-mobility III-V channel are studied using self-consistent quantum corrected ensemble Monte Carlo device simulations of charge and spin transport. The simulations including spin–orbit coupling mechanisms (Dresselhaus and Rashba coupling) examine the electron spin transport in the 25 nm gate length I n 0.7 G a 0.3 A s MOSFET. The transistor lateral dimensions (the gate length, the source-to-gate, and the gate-to-drain spacers) are increased to investigate the spin-dependent drain current modulation induced by the gate from room temperature of 300 K down to 77 K. This modulation increases with increasing temperature due to increased Rashba coupling. Finally, an increase of up to 20 nm in the gate length, source-to-gate, or the gate-to-drain spacers increases the spin polarization and enhances the spin-dependent drain current modulation at the drain due to polarization-refocusing effects.