Suppression of lateral diffusion in the Cr‐Si system by ion irradiation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.95338
Reference13 articles.
1. Growth Kinetics Observed in the Formation of Metal Silicides on Silicon
2. Lateral growth of titanium silicide over a silicon dioxide layer
3. Lateral diffusion of Ni and Si through Ni2Si in Ni/Si couples
4. A Self-Aligned Mo-Silicide Formation
5. Ion‐beam‐induced modification of silicide formation in rare‐earth metals: Er‐Si and Tb‐Si systems
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1. Constant-Current Stressing of SiCr-Based Thin-Film Resistors: Initial “Wearout” Investigation;IEEE Transactions on Device and Materials Reliability;2007-06
2. Thin Film Silicide Formation;Semiconducting Silicides;2000
3. Diffraction‐limited operation from monolithically integrated diode laser array and self‐imaging (Talbot) cavity;Applied Physics Letters;1989-11-06
4. Window size effect on lateral growth of nickel silicide;Journal of Applied Physics;1989-08
5. Recent progress in refractory-metal silicide formation by ion beam mixing and its applications to VLSL;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1989-03
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