ZnTe nanowires grown on GaAs(100) substrates by molecular beam epitaxy-Reference-Cited by-同舟云学术

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ZnTe nanowires grown on GaAs(100) substrates by molecular beam epitaxy

Published:2006-09-25 Issue:13 Volume:89 Page:133114
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Janik E.,Sadowski J.,Dłużewski P.,Kret S.,Baczewski L. T.,Petroutchik A.,Łusakowska E.,Wróbel J.,Zaleszczyk W.,Karczewski G.,Wojtowicz T.,Presz A.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2357334

Reference25 articles.

1. Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices

2. One-dimensional Steeplechase for Electrons Realized

3. VAPOR‐LIQUID‐SOLID MECHANISM OF SINGLE CRYSTAL GROWTH

4. Nanowire resonant tunneling diodes

5. Nanowire Single-Electron Memory

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