Chloride vapor phase epitaxial growth of a Ga0.52In0.48P/GaAs heterostructure with an abrupt heterointerface
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.96631
Reference17 articles.
1. Exciton absorption, photoluminescence and band structure of N-Free and N-DOPED In1−xGaxP
2. Room‐temperature pulsed operation of AlGaInP/GaInP/AlGaInP double heterostructure visible light laser diodes grown by metalorganic chemical vapor deposition
3. Liquid‐phase‐epitaxial growth of In0.49Ga0.51P on (100) GaAs by a supercooling method
4. Influence of lattice mismatch on photoluminescence from liquid phase epitaxial grown InGaP on GaAs substrates
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Defects in organometallic vapor‐phase epitaxy‐grown GaInP layers;Applied Physics Letters;1991-08-19
2. GaAs/GaInP multiquantum well long‐wavelength infrared detector using bound‐to‐continuum state absorption;Applied Physics Letters;1990-10-22
3. References;Thin Films by Chemical Vapour Deposition;1990
4. Extremely high electron mobility in a GaAs‐GaxIn1−xP heterostructure grown by metalorganic chemical vapor deposition;Applied Physics Letters;1989-07-31
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