Photoluminescence of AlGaAs:Ge and GaAs:Ge and Sn grown by liquid‐phase epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.335227
Reference11 articles.
1. Photoluminescence of Ge‐doped AlxGa1−xAs grown by liquid phase epitaxy
2. Photoluminescence spectrum ofp‐type AlxGa1−xAs:Ge
3. The incorporation and characterisation of acceptors in epitaxial GaAs
4. Photolumineszenz-spektrum des Sn-Akzeptors in GaAs
5. Piezospectroscopic and magneto-optical study of the Sn-acceptor in GaAs
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1. Bowing of the defect formation energy in semiconductor alloys;Physical Review B;2013-06-12
2. Photoluminescence of the Se and Si DX centers in (AlxGa1−x)0.5In0.5P (x<0.5) grown by metalorganic vapor phase epitaxy;Journal of Applied Physics;1997-08
3. Photoluminescence of AlxGa1−xAs alloys;Journal of Applied Physics;1994-05-15
4. Photoluminescence Properties of Sn-Related Donor State in AlxGa1-xAs;Japanese Journal of Applied Physics;1993-08-15
5. Germanium as a deep level in alxga1− xas grown by organometallic vapor phase epitaxy;Journal of Electronic Materials;1991-10
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