Vertical nonpolar growth templates for light emitting diodes formed with GaN nanosheets
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3671182
Reference11 articles.
1. Measured and calculated radiative lifetime and optical absorption ofInxGa1−xN/GaNquantum structures
2. Influence of the quantum-well thickness on the radiative recombination of InGaN/GaN quantum well structures
3. Auger recombination in InGaN measured by photoluminescence
4. Origin of efficiency droop in GaN-based light-emitting diodes
5. Demonstration of Nonpolarm-Plane InGaN/GaN Light-Emitting Diodes on Free-Standingm-Plane GaN Substrates
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