Indirectly heated cathode arc discharge source for ion implantation of semiconductors-Reference-Cited by-同舟云学术

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Indirectly heated cathode arc discharge source for ion implantation of semiconductors

Published:1998-02 Issue:2 Volume:69 Page:840-842
ISSN:0034-6748
Container-title:Review of Scientific Instruments
language:en
Short-container-title:Review of Scientific Instruments

Author:

Horsky Thomas N.

Publisher

AIP Publishing

Subject

Instrumentation

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1148541

Reference1 articles.

1. Ion sources for use in ion implantation

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characteristics of inductively coupled plasma radio-frequency ion source of ion implanters for high number density dopant generation;Current Applied Physics;2024-09

2. Thermal analysis of implanter source head in radio-frequency inductively coupled plasma;Journal of Vacuum Science & Technology B;2024-01-30

3. Generation of B5+ ions from a nanosecond laser plasma;Vacuum;2018-08

4. Ion Beam Technology;Ion Beams in Materials Processing and Analysis;2012

5. Self-heated hollow cathode discharge system for charged particle sources and plasma generators;Review of Scientific Instruments;2010-02

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