Characteristics of inductively coupled plasma radio-frequency ion source of ion implanters for high number density dopant generation-Reference-Cited by-同舟云学术

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Characteristics of inductively coupled plasma radio-frequency ion source of ion implanters for high number density dopant generation

Published:2024-09 Issue: Volume:65 Page:53-59
ISSN:1567-1739
Container-title:Current Applied Physics
language:en
Short-container-title:Current Applied Physics

Author:

Hwang Jong Jin^ORCID,Ryu Choong-Mo,Sim Hyo Jun,Lee Ho-Jun,Moon Seung Jae^ORCID

Funder

National Research Foundation of Korea

Publisher

Elsevier BV

Reference47 articles.

1. Thermal diffusion—ion implantation;Rudan;Phys. Semiconductor Dev.,2018

2. CMOS Manufacturing Processes. Springer Handbook of Semiconductor Devices;Lilak,2022

3. Ion implanters, ion implant;Rimini;Basics Dev. Fabr.,1995

4. Handbook of Ion Implantation Technology;Ziegler,1992

5. Freeman ion source: an overview;Chivers;Rev. Sci. Instrum.,1992

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