A new technique to decompose closely spaced interface and bulk trap states using temperature dependent pulse‐width deep level transient spectroscopy method: An application to PT/CdS photodetector
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.353334
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1. Acoustoelectric Effect in Semiconductor Structures - Tool for Interface States Investigation by Complex Acoustic Spectroscopy;Acta Acustica united with Acustica;2016-07-01
2. Development and Applications of a New Deep Level Transient Spectroscopy Method and New Averaging Techniques;Advances in Imaging and Electron Physics;1999
3. Averaging and recording of digital deep-level transient spectroscopy transient signals;Review of Scientific Instruments;1998-06
4. Single Junctions in ZnO Varistors Studied by Current-Voltage Characteristics and Deep Level Transient Spectroscopy;Japanese Journal of Applied Physics;1995-04-15
5. Quantitative surface photovoltage spectroscopy of semiconductor interfaces;Journal of Electronic Materials;1995-04
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