Optimization of cubic GaN growth by metalorganic chemical vapor deposition based on residual strain relaxation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1536714
Reference16 articles.
1. Threading dislocations in GaAs on pre-patterned Si and in post-patterned GaAs on Si
2. Effect of strain on surface morphology in highly strained InGaAs films
3. Relaxation Mechanism of Thermal Stresses in the Heterostructure of GaN Grown on Sapphire by Vapor Phase Epitaxy
4. Epitaxial growth of zinc blende and wurtzitic gallium nitride thin films on (001) silicon
5. Initial stages of GaN/GaAs (100) growth by metalorganic chemical vapor deposition
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