Investigation of MOVPE-grown zincblende GaN nucleation layers on 3C-SiC/Si substrates
Author:
Funder
Energy Catalyst Round 4 - Mid Stage Feasibility scheme
EPSRC
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference30 articles.
1. Molecular beam epitaxy of phase pure cubic InN;Schörmann;Appl. Phys. Lett.,2006
2. Cubic group-III nitride-based nanostructures — basics and applications in optoelectronics;As;Microelectron. J.,2009
3. Band parameters for nitrogen-containing semiconductors;Vurgaftman;J. Appl. Phys.,2003
4. Growth of cubic phase gallium nitride by modified molecular-beam epitaxy;Paisley;J. Vac. Sci. Technol., A,1989
5. An investigation of the properties of cubic GaN grown on GaAs by plasma-assisted molecular-beam epitaxy;Strite;J. Vac. Sci. Technol., B,1991
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2. Effect of different substrates on material properties of cubic GaN thin films grown by LP-MOCVD method;Journal of Crystal Growth;2023-01
3. Influence of Al x Ga1−x N nucleation layers on MOVPE-grown zincblende GaN epilayers on 3C-SiC/Si(001);Journal of Physics D: Applied Physics;2022-02-02
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