Author:
Fossard Frédéric,Boulmer Jacques,Débarre Dominique,Perrossier Jean-Luc,Bachelet Cyril,Fortuna Franck,Mathet Véronique,Bouchier Daniel
Subject
Physics and Astronomy (miscellaneous)
Reference21 articles.
1. K. Rim, J. Chu, H. Chen, K. A. Jenkins, T. Kanarsky, K. Lee, A. Mocuta, H. Zhu, R. Roy, J. Newbury, J. Ott, K. Petrarca, P. Mooney, D. Lacey, S. Koester, K. Chan, D. Boyd, M. Leong, and H. S. Wong, Symposium on VLSI Technology, Digest of Technical Papers, Honolulu, Hawaii, 11–13 June 2002 (IEEE, New York, 2002), pp. 98–99.
2. Totally relaxed GexSi1−xlayers with low threading dislocation densities grown on Si substrates
3. Characteristics of selective epitaxial SiGe deposition processes for recessed source/drain applications
4. Detection of Cs2Ge+ clusters for the quantification of germanium atoms by secondary ion mass spectrometry: Application to the characterization of Si1−xGex layers (0⩽x⩽1) and germanium diffusion in silicon
Cited by
4 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献