Low temperature heteroepitaxy of InP on Si(111) substrates treated with buffered HF solution-Reference-Cited by-同舟云学术

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Low temperature heteroepitaxy of InP on Si(111) substrates treated with buffered HF solution

Published:1995-06-12 Issue:24 Volume:66 Page:3352-3354
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Ababou Y.,Masut R. A.,Yelon A.,Poulin S.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.113754

Reference20 articles.

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of Bi Irradiation on the Molecular Beam Epitaxy Growth of GaSb on Ge (111) Vicinal Substrates;physica status solidi (a);2019-08-08

2. Ohmic InP/Si direct-bonded heterointerfaces;Applied Physics Letters;2019-05-13

3. Effects of a GaSb buffer layer on an InGaAs overlayer grown on Ge(111) substrates: Strain, twin generation, and surface roughness;Journal of Applied Physics;2018-04-28

4. High vertical yield InP nanowire growth on Si(111) using a thin buffer layer;Nanotechnology;2013-10-24

5. Towards a monolithically integrated III–V laser on silicon: optimization of multi-quantum well growth on InP on Si;Semiconductor Science and Technology;2013-08-21

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