Dependence of impurity incorporation on the polar direction of GaN film growth
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.126267
Reference14 articles.
1. Room‐temperature continuous‐wave operation of InGaN multi‐quantum‐well structure laser diodes
2. Direct observation of localized high current densities in GaN films
3. Charge accumulation at a threading edge dislocation in gallium nitride
4. A near‐field scanning optical microscopy study of the photoluminescence from GaN films
5. Nature and elimination of yellow-band luminescence and donor–acceptor emission of undoped GaN
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