P-type conduction in two-dimensional MoS2 via oxygen incorporation
Author:
Affiliation:
1. Air Force Research Lab, Materials and Manufacturing Directorate, Wright Patterson AFB, Ohio 45433, USA
2. Universal Technology Corporation, Dayton, Ohio 45432, USA
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/am-pdf/10.1063/1.4983092
Reference56 articles.
1. The transition metal dichalcogenides discussion and interpretation of the observed optical, electrical and structural properties
2. Atomically ThinMoS2: A New Direct-Gap Semiconductor
3. Emerging Photoluminescence in Monolayer MoS2
4. Realization and electrical characterization of ultrathin crystals of layered transition-metal dichalcogenides
5. $\hbox{MoS}_{2}$ Dual-Gate MOSFET With Atomic-Layer-Deposited $\hbox{Al}_{2}\hbox{O}_{3}$ as Top-Gate Dielectric
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