Electrical and optical properties of InP grown by metalorganic vapor phase epitaxy with extremely low V/III ratios using tertiarybutylphosphine
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.108554
Reference11 articles.
1. Non-hydride group V sources for OMVPE
2. BH lasers with GaInAsP and GaInAs active layers grown by MOVPE using tertiarybutylarsine and tertiarybutylphosphine
3. High quality long‐wavelength lasers grown by atmospheric organometallic vapor phase epitaxy using tertiarybutylarsine
4. State of the art 1.3 μm lasers by atmospheric pressure MOVPE using tertiary butylphosphine
5. MOVPE growth of InP using isobutylphosphine and tert-butylphosphine
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Indium phosphide vapor phase epitaxy at high growth rates, growth kinetics, and characterization;Journal of Applied Physics;1998-08
2. Growth of InP using TBP and DTBP in metalorganic molecular beam epitaxy;Journal of Crystal Growth;1998-06
3. Chemical beam epitaxial growth of inp using EDMIn and BPE;Journal of Electronic Materials;1997-04
4. MOVPE growth of III–V compounds for optoelectronic and electronic applications;Microelectronics Journal;1996-07
5. CBE growth of InP using BPE and TBP: a comparative study;Journal of Crystal Growth;1996-07
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