State of the art 1.3 μm lasers by atmospheric pressure MOVPE using tertiary butylphosphine-Reference-Cited by-同舟云学术

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State of the art 1.3 μm lasers by atmospheric pressure MOVPE using tertiary butylphosphine

Published:1991-05-23 Issue:11 Volume:27 Page:1005-1006
ISSN:1350-911X
Container-title:Electronics Letters
language:en
Short-container-title:

Author:

Ougazzaden A.,Mellet R.,Gao Y.,Kazmierski C.,Robein D.,Mircea A.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_19910626?crawler=true&mimetype=application/pdf

Reference6 articles.

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Making Semiconductor Materials for Optoelectronics;Materials for Optoelectronics;1996

2. From research to manufacture—The evolution of MOCVD;JOM;1995-12

3. Low threshold λ = 1.3 μm multi-quantum well laser diodes grown by metalorganic vapor phase epitaxy using tertiarybutylarsine and tertiarybutylphosphine precursors;Journal of Crystal Growth;1994-12

4. Metalorganic vapor phase epitaxy growth of InGaP using tertiarybutylphosphine and its application to selective regrowth of current blocking layers of laser diodes;Journal of Crystal Growth;1994-12

5. Epitaxy with “Safer-to-Handle” Precursors;Gallium Arsenide Technology in Europe;1994

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