Enhancement of secondary electron emission from heavily Si-implanted and Si-doped GaAs-Reference-Cited by-同舟云学术

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Enhancement of secondary electron emission from heavily Si-implanted and Si-doped GaAs

Published:1997-10-13 Issue:15 Volume:71 Page:2142-2144
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Iwase F.,Nakamura Y.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.119362

Reference11 articles.

1. Field-emission SEM imaging of compositional and doping layer semiconductor superlattices

2. Quantitative two-dimensional dopant profiles obtained directly from secondary electron images

3. Chemisorption-induced defects at interfaces on compound semiconductors

4. Secondary electron emission from Si‐implanted GaAs

5. Si‐defect concentrations in heavily Si‐doped GaAs: Changes induced by annealing

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