Bipolar resistive switching characteristics in tantalum nitride-based resistive random access memory devices
Author:
Affiliation:
1. School of Electrical Engineering, Anam-dong 5ga, Sungbuk-gu, Seoul 136-701, South Korea
Funder
National Research Foundation of Korea (NRF)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4921349
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1. Design of control oxide thickness for multi-level storage in a stepped NFGM MOSCAP
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