Relation between the CF2 radical and plasma density measured using LIF and cutoff probe in a CF4 inductively coupled plasma
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1788880
Reference17 articles.
1. Selective etching of SiO2 over polycrystalline silicon using CHF3 in an inductively coupled plasma reactor
2. High density fluorocarbon etching of silicon in an inductively coupled plasma: Mechanism of etching through a thick steady state fluorocarbon layer
3. Radical Behavior in Inductively Coupled Fluorocarbon Plasma forSiO2Etching
4. Model and probe measurements of inductively coupled CF4 discharges
5. Analysis of a CF4/O2plasma using emission, laser‐induced fluorescence, mass, and Langmuir spectroscopy
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