Detailed investigation of a nonradiative recombination center in Si by electrically detected magnetic resonance
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.359268
Reference22 articles.
1. Spin‐dependent recombination in irradiated Si/SiO2device structures
2. Electrically detected magnetic resonance of a transition metal related recombination center in Sip–ndiodes
3. Spin dependent recombination in Pt‐doped siliconp‐njunctions
4. Spin-dependent Shockley-read recombination of electrons and holes in indirect-band-gap semiconductor p-n junction diodes
5. Optically detected magnetic resonance (O.D.M.R.) investigations of recombination processes in semiconductors
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1. Enhanced magnetometry with an electrically detected spin defect ensemble in silicon carbide;Applied Physics Letters;2023-06-05
2. Recombination of Free Carriers and Space Charges in Poly(3-hexylthiophene), as Revealed by Electrically and Capacitively Detected Magnetic Resonances;The Journal of Physical Chemistry C;2020-08-25
3. Sensitivity analysis of magnetic field sensors utilizing spin-dependent recombination in silicon diodes;Solid-State Electronics;2010-11
4. Recombination in silicon thin-film solar cells: a study of electrically detected magnetic resonance;IEE Proceedings - Circuits, Devices and Systems;2003
5. Spin-Dependent Processes In Thin-Film Silicon Solar Cells;MRS Proceedings;2000
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