Electrically detected magnetic resonance of a transition metal related recombination center in Sip–ndiodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.106569
Reference13 articles.
1. Spin-dependent and localisation effects at Si/SiO2device interfaces
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3. Explanation of the large spin-dependent recombination effect in semiconductors
4. Spin-dependent Shockley-read recombination of electrons and holes in indirect-band-gap semiconductor p-n junction diodes
5. Spin-dependent recombination in a silicon p-n junction
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