Electrical behavior of Yb ion inp‐ andn‐type InP
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.106481
Reference19 articles.
1. Time‐resolved photoluminescence spectroscopy from erbium‐doped Ga0.55Al0.45As
2. Lattice location and optical activity of Yb in III–V semiconducting compounds
3. Time resolved photoluminescence from Yb3+ centers in InP:Yb
4. On excitation and decay mechanisms of the Yb3+luminescence in InP
5. Excitation and decay mechanisms of the intra‐4fluminescence of Yb3+in epitaxial InP:Yb layers
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1. Novel Approach to Preparation of InP Layers for Radiation Detectors;Materials Science Forum;2005-03
2. P-type InP grown by liquid phase epitaxy from melts with rare earth admixtures;Materials Science and Engineering: B;2002-04
3. Thermal quenching of luminescence in erbium doped semiconductors;Pramana;1997-06
4. Effect of Er dopant on the properties of In0.53Ga0.47As layers grown by liquid phase epitaxy;Journal of Applied Physics;1997-03
5. Kinetics and quenching mechanisms of photoluminescence in Yb‐doped InP;Journal of Applied Physics;1994-10-15
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