Time‐resolved photoluminescence spectroscopy from erbium‐doped Ga0.55Al0.45As
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.104983
Reference12 articles.
1. Photoluminescence optimization and characteristics of the rare‐earth element erbium implanted in GaAs, InP, and GaP
2. Observation of enhanced single longitudinal mode operation in 1.5‐μm GaInAsP erbium‐doped semiconductor injection lasers
3. Photoluminescence excitation measurements on GaAs:Er grown by molecular‐beam epitaxy
4. Electrical properties of ytterbium‐doped InP grown by metalorganic chemical vapor deposition
5. Intra‐4f‐shell luminescence excitation and quenching mechanism of Yb in InP
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