Wavelength tunable ultrashort pulse generation from a passively mode-locked asymmetric-quantum-well semiconductor laser
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1510587
Reference14 articles.
1. Tunable, picosecond pulse generation using a compressed, modelocked laser diode source
2. High spectral tuning range of a modelocked InGaAs/InGaAsP MQW laser diode due to light hole gain contribution
3. Wavelength tunable source of subpicosecond pulses from CW passively mode-locked two-section multiple-quantum-well laser
4. Broad-band superluminescent diodes fabricated on a substrate with asymmetric dual quantum wells
5. 1.4-μm InGaAsP-InP strained multiple-quantum-well laser for broad-wavelength tunability
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1. Comparison of symmetric and asymmetric double quantum well extended-cavity diode lasers for broadband passive mode-locking at 780 nm;Applied Optics;2017-06-30
2. Mode locking of an external cavity asymmetric quantum-well GaAs/AlGaAs semiconductor laser;Quantum Electronics;2006-11-30
3. Developing 1D nanostructure arrays for future nanophotonics;Nanoscale Research Letters;2006-08-26
4. Compact laser-diode-based femtosecond sources;New Journal of Physics;2004-11-27
5. Ultrashort Optical Pulse Generation With a Mode-Locked Long-Wavelength (1075–1085 nm) InGaAs–GaAs Semiconductor Laser;IEEE Photonics Technology Letters;2004-08
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