Comparison of symmetric and asymmetric double quantum well extended-cavity diode lasers for broadband passive mode-locking at 780  nm

Author:

Christopher Heike,Kovalchuk Evgeny V.,Wenzel Hans,Bugge Frank,Weyers Markus,Wicht Andreas,Peters Achim,Tränkle Günther

Funder

Deutsches Zentrum für Luft- und Raumfahrt (DLR)

Bundesministerium für Wirtschaft und Energie (BMWi)

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics,Engineering (miscellaneous),Electrical and Electronic Engineering

Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. High power 780nm single emitter with 16W and bar with 180W of continuous-wave output laser diodes;AOPC 2023: Laser Technology and Applications; and Optoelectronic Devices and Integration;2023-12-18

2. A Micro-Integrated Mode-Locked Extended-Cavity Diode Laser Emitting in the Wavelength Range Around 780 nm;2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC);2019-06

3. AlGaAs-based vertical-external-cavity surface-emitting laser exceeding 4  W of direct emission power in the 740–790  nm spectral range;Optics Letters;2018-03-29

4. Mode-Locked Lasers with “Thin” Quantum Wells in 1.55 μm Spectral Range;Technical Physics Letters;2018-02

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