Photoconductivity of Hf-based binary metal oxide systems-Reference-Cited by-同舟云学术

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Photoconductivity of Hf-based binary metal oxide systems

Published:2008-12 Issue:11 Volume:104 Page:114103
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Shamuilia S.,Afanas’ev V. V.,Stesmans A.,McCarthy I.,Campbell S. A.,Boutchich M.,Roeckerath M.,Heeg T.,Lopes J. M. J.,Schubert J.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3020520

Reference40 articles.

1. Alternative dielectrics to silicon dioxide for memory and logic devices

2. High-κ gate dielectrics: Current status and materials properties considerations

3. Thermal stability and electrical characteristics of ultrathin hafnium oxide gate dielectric reoxidized with rapid thermal annealing

4. Thermodynamic stability of high-K dielectric metal oxides ZrO2 and HfO2 in contact with Si and SiO2

5. Interfacial reaction between chemically vapor-deposited HfO2 thin films and a HF-cleaned Si substrate during film growth and postannealing

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1. CeO ₂ Doping of Hf _0.5 Zr _0.5 O ₂ Thin Films for High Endurance Ferroelectric Memories;Advanced Electronic Materials;2022-03-18

2. Modulation of interfacial and electrical properties of ALD-derived HfAlO/Al2O3/Si gate stack by annealing temperature;Journal of Alloys and Compounds;2017-01

3. Low leakage ZrO2 based capacitors for sub 20 nm dynamic random access memory technology nodes;Journal of Applied Physics;2016-02-14

4. High dielectric constant and capacitance in ultrasmall (2.5 nm) SrHfO3 perovskite nanoparticles produced in a low temperature non-aqueous sol–gel route;RSC Advances;2016

5. Ultra-thin ZrO2/SrO/ZrO2 insulating stacks for future dynamic random access memory capacitor applications;Journal of Applied Physics;2015-06-14

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