Electrically controlled wire-channel GaN/AlGaN transistor for terahertz plasma applications-Reference-Cited by-同舟云学术

Electrically controlled wire-channel GaN/AlGaN transistor for terahertz plasma applications

Author:

Cywiński G.¹,Yahniuk I.¹^ORCID,Kruszewski P.¹²,Grabowski M.¹,Nowakowski-Szkudlarek K.¹,Prystawko P.¹,Sai P.¹,Knap W.¹³,Simin G. S.⁴,Rumyantsev S. L.⁵

Affiliation:

1. Institute of High Pressure Physics, Polish Academy of Sciences, ul. Sokołowska 29/37, 01-142 Warsaw, Poland

2. TopGaN Ltd., ul. Sokołowska 29/37, 01-142 Warsaw, Poland

3. Laboratoire Charles Coulomb (L2C), UMR 5221 CNRS, Montpellier University, Pl. E. Bataillon, 34095 Montpellier, France

4. Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208, USA

5. National Research University of Information Technologies, Mechanics, and Optics, St. Petersburg 197101, Russia

Funder

Narodowe Centrum Nauki

Fundacja na rzecz Nauki Polskiej

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

Reference20 articles.

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

3. THz detection optimization of antenna coupled AlGaN/GaN high electron mobility transistors;2023 48th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz);2023-09-17

5. AlGaN/GaN heterostructures for plasma wave detection and emission in THz regime;Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications XIV;2021-03-05