Electrically controlled wire-channel GaN/AlGaN transistor for terahertz plasma applications-Reference-Cited by-同舟云学术

Electrically controlled wire-channel GaN/AlGaN transistor for terahertz plasma applications

Author:

Cywiński G.¹,Yahniuk I.¹^ORCID,Kruszewski P.¹²,Grabowski M.¹,Nowakowski-Szkudlarek K.¹,Prystawko P.¹,Sai P.¹,Knap W.¹³,Simin G. S.⁴,Rumyantsev S. L.⁵

Affiliation:

1. Institute of High Pressure Physics, Polish Academy of Sciences, ul. Sokołowska 29/37, 01-142 Warsaw, Poland

2. TopGaN Ltd., ul. Sokołowska 29/37, 01-142 Warsaw, Poland

3. Laboratoire Charles Coulomb (L2C), UMR 5221 CNRS, Montpellier University, Pl. E. Bataillon, 34095 Montpellier, France

4. Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208, USA

5. National Research University of Information Technologies, Mechanics, and Optics, St. Petersburg 197101, Russia

Funder

Narodowe Centrum Nauki

Fundacja na rzecz Nauki Polskiej

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

Reference20 articles.

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