Limitations on the open‐circuit voltage imposed byP+andN+regions in silicon solar cells
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.328805
Reference12 articles.
1. A methodology for experimentally based determination of gap shrinkage and effective lifetimes in the emitter and base of p-n junction solar cells and other p-n junction devices
2. Physics underlying the performance of back-surface-field solar cells
3. The influence of heavy doping on the emitter efficiency of a bipolar transistor
4. Auger coefficients for highly doped and highly excited silicon
5. Application of the superposition principle to solar-cell analysis
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2. Simultaneous recrystallization, phosphorous diffusion and antireflection coating of silicon films using laser treatment;Thin Solid Films;2006-02
3. Optimization of solar cell performance;Solid-State Electronics;1990-01
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