Electrically active defects in as-implanted, deep buried layers inp-type silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.363992
Reference23 articles.
1. A systematic analysis of defects in ion-implanted silicon
2. Cross‐sectional high‐resolution electron microscopy investigation of argon‐ion implantation‐induced amorphization of silicon
3. Damage nucleation and annealing in MeV ion‐implanted Si
4. Generation of point defects in crystalline silicon by MeV heavy ions: Dose rate and temperature dependence
5. Generation of point defects in crystalline silicon by MeV heavy ions: Dose rate and temperature dependence
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1. Characterization of plasma etching induced interface states at Ti∕p-SiGe Schottky contacts;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2008-07
2. Effects of deep defect concentration on junction space charge capacitance measurements;Journal of Applied Physics;2007-05
3. Deep level transient spectroscopy of defects introduced in Si and SiGe by low energy particles;Journal of Physics: Condensed Matter;2003-09-19
4. Processing-Induced Defects in Epitaxially Grown p- and n-Type SiGe;Defect and Diffusion Forum;2001-11
5. Configurationally metastable defects in irradiated epitaxially grown boron-dopedp-type Si;Physical Review B;2000-12-22
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