An investigation of the Young's modulus of single-crystalline wurtzite indium nitride using an atomic force microscopy based micromechanical bending test
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4763459
Reference23 articles.
1. Unusual properties of the fundamental band gap of InN
2. When group-III nitrides go infrared: New properties and perspectives
3. Optical and electrical properties of InN grown by radio-frequency reactive sputtering
4. Absorption and Emission of Hexagonal InN. Evidence of Narrow Fundamental Band Gap
5. Indium nitride (InN): A review on growth, characterization, and properties
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2. Reactive Sputtering Growth of Indium Nitride Thin Films on Flexible Substrate Under Different Substrate Temperatures;Journal of Physics: Conference Series;2020-05-01
3. High Piezoelectric Conversion Properties of Axial InGaN/GaN Nanowires;Nanomaterials;2018-05-25
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