Electron multiplication in AlxGa1−xAs/GaAs heterostructures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.120531
Reference10 articles.
1. Impact ionisation in multilayered heterojunction structures
2. Enhancement of electron impact ionization in a superlattice: A new avalanche photodiode with a large ionization rate ratio
3. Dependence of the GaAs/AlGaAs superlattice ionization rate on Al content
4. Properties of GaAs/Al0.53Ga0.47As Avalanche Photodiode with Superlattice Fabricated by Molecular Beam Epitaxy
5. Dependence of ionization coefficients on well and barrier widths for GaAs/AlGaAs multiple quantum wells
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4. Monte Carlo Simulation of Hot Carrier Transport in Heterogeneous Ge/${\rm Al}_{x}{\rm Ga}_{1-x}{\rm As}~(0\leq x\leq 0.8)$ Multilayer Avalanche Photodiodes;IEEE Transactions on Electron Devices;2013-10
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