Range profiles of 600–1200 keV Xe+implanted in KTiOPO4
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.357621
Reference22 articles.
1. Ranges and range theories
2. Range profiles of 10 to 390 keV ions (29 ≦ Z1 ≦ 83) implanted into amorphous silicon
3. Large Z1-range effect for Eu, Yb and Au ions implanted in amorphized silicon
4. Range straggling of MeV ions in amorphous silicon: Discrepancies with TRIM
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Depth distribution and diffusion behavior of implanted Bi+ ions into KTiOPO4;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2002-03
2. Projected Range, Range Straggling and Lateral Spread of 2.0 MeV Au+Ions Implanted into Si;Japanese Journal of Applied Physics;2002-02-15
3. Ion implantation of MeV Au+into potassium titanyl phosphate;Journal of Physics D: Applied Physics;2001-05-22
4. Mean projected range and range straggling of Bi+ ions implanted into lithium triborate;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2001-03
5. Range straggling and lateral spread of MeV Au+ions in LiB3O5and SiN1.375H0.603;Journal of Physics D: Applied Physics;2000-07-24
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