Doping and hydrogenation by ion implantation of glow discharge deposited amorphous silicon films
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.102843
Reference10 articles.
1. The effects of ion implantation on the electrical properties of amorphous silicon
2. Ion Implantation as a Tool to Control Properties of Amorphous Hydrogenated Silicon
3. Transport phenomena in amorphous silicon doped by ion implantation of 3d metals
4. Ion implantation and hydrogen passivation in amorphous silicon films
5. Implantation damage in amorphous silicon
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1. p-Type a-Si:H Doping Using Plasma Immersion Ion Implantation for Silicon Heterojunction Solar Cell Application;Solar RRL;2017-02
2. Chapter 4 Ion Beams in Amorphous Semiconductor Research;Semiconductors and Semimetals;1997
3. Electrical and optical properties of implanted amorphous silicon;Journal of Applied Physics;1994-07-15
4. Photoluminescence and photothermal deflection spectroscopy in potassium doped a-Si:H;Journal of Non-Crystalline Solids;1993-12
5. The contribution of ion-beam techniques to the physics and technology of amorphous semiconductors;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1993-01
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