Enhancement of channel electric field in AlGaN/GaN multi-nanochannel high electron mobility transistors-Reference-Cited by-同舟云学术

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Enhancement of channel electric field in AlGaN/GaN multi-nanochannel high electron mobility transistors

Published:2018-12-14 Issue:22 Volume:124 Page:224502
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Matys M.¹,Nishiguchi K.¹,Adamowicz B.²,Kuzmik J.³,Hashizume T.¹

Affiliation:

1. Research Center for Integrated Quantum Electronics, Hokkaido University, Kita-13 Nishi-8, Kita-ku, 060-8628 Sapporo, Japan

2. Institute of Physics-CND, Silesian University of Technology, Konarskiego 22B, 44-100 Gliwice, Poland

3. Institute of Electrical Engineering, Slovak Academy of Sciences, Dubravska cesta 9, 841 04 Bratislava, Slovak Republic

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5056194

Reference32 articles.

1. GaN-Based RF Power Devices and Amplifiers

2. Scaling of GaN HEMTs and Schottky Diodes for Submillimeter-Wave MMIC Applications

3. GaN high electron mobility transistors for sub-millimeter wave applications

4. AlGaN/GaN high-electron-mobility transistor technology for high-voltage and low-on-resistance operation

5. GaN-on-Si Power Technology: Devices and Applications

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Temperature Nonmonotonic Behavior of GaN HEMTs Kink Effect Caused by Trap-Assisted Impact Ionization;IEEE Transactions on Electron Devices;2024-03

2. Influence of Transverse Geometry of Sidewall Gates on Characteristics of AlGaN/GaN Fin-HEMTs;IEEE Transactions on Electron Devices;2024-03

3. Strain relaxation and self-heating effects of fin AlGaN/GaN HEMTs;Semiconductor Science and Technology;2023-02-16

4. Fabrication and characterization of GaN-based nanostructure field effect transistors;Solid-State Electronics;2021-10

5. Influence of High Electric Field on Operation of AlGaN/AlN/GaN High Electron Mobility Transistor;Acta Physica Polonica A;2021-08

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