Effects of composition profile on characteristics of GaAs–Ga1−xAlxAs double‐heterostructure lasers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1662634
Reference3 articles.
1. Reproducible Liquid‐Phase‐Epitaxial Growth of Double Heterostructure GaAs–AlxGa1−xAs Laser Diodes
2. Preparation of multilayer LPE heterostructures with crystalline solid solutions of AlxGa1−xAs: Heterostructure lasers
3. GaAs–AlxGa1−xAs Double Heterostructure Injection Lasers
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Improved Spatial Resolution in Electron Probe Microanalysis of Multilayer Structures;Crystal Research and Technology;1982
2. Growth and propagation mechanism of 〈110〉‐oriented dark‐line defects in GaAs‐Ga1−xAlxAs double heterostructure crystals;Journal of Applied Physics;1977-07
3. Optical waveguiding in semiconductor injection lasers and integrated optics;Optical and Quantum Electronics;1977-01
4. The Measurement of Al Distribution in the (Al, Ga)As DH Wafers;Japanese Journal of Applied Physics;1976-11
5. An improved LPE growth method for GaAs-Ga1-xAlxAs double heterostructures;Journal of Crystal Growth;1976-10
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