Zinc delta doping of GaAs by organometallic vapor phase epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.102240
Reference12 articles.
1. Complex free‐carrier profile synthesis by ’’atomic‐plane’’ doping of MBE GaAs
2. The σ doping layer: Electronic properties and device perspectives
3. Fundamental studies and device application of ?-doping in GaAs Layers and in AlxGa1?xAs/GaAs heterostructures
4. Spatial distribution of impurities in delta-doped n-type GaAs
5. Migration of Si in δ-doped GaAs
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1. Influence of inhomogeneity and nonlinearity of multilayer structure on dopant redistribution in delta-doped area during epitaxial overgrowth;Nonlinear Analysis: Real World Applications;2010-06
2. REDISTRIBUTION OF DOPANT DURING OVERGROWTH OF A DELTA-LAYER;Nano;2009-08
3. Preparation and properties of Zn delta-doped GaAs/AlGaAs heterojunction phototransistor;Microelectronics Journal;2009-03
4. Dynamics of δ-dopant redistribution during heterostructure growth;The European Physical Journal B;2007-06
5. Asymmetrization of spatial distribution of δ-dopants;Journal of Applied Physics;2007-06
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