Asymmetrization of spatial distribution of δ-dopants
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2723862
Reference22 articles.
1. Delta doping of III–V compound semiconductors: Fundamentals and device applications
2. MBE growth, structural, and transport properties of Mn δ-doped GaAs Layers
3. Lattice locations of silicon atoms in δ-doped layers in GaAs at high doping concentrations
4. Beryllium δ doping of GaAs grown by molecular beam epitaxy
5. A solution of the doping problem for Ga delta‐doping layers in Si
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1. Analytical Approach to Model Distributions of Concentrations of Charge Carriers in a Diffusive-Junction Rectifiers with Optimized Distributions of Dopants;Journal of Advanced Physics;2013-06-01
2. INFLUENCE OF POROSITY OF MATERIALS ON REDISTRIBUTION OF DOPANT DURING MANUFACTURING OF DIFFUSION-JUNCTION RECTIFIERS IN SEMICONDUCTOR HETEROSTRUCTURES;Modern Physics Letters B;2010-12-30
3. INFLUENCE OF MECHANICAL STRESS IN A MULTILAYER STRUCTURE ON SPATIAL DISTRIBUTION OF DOPANTS IN IMPLANTED-JUNCTION AND DIFFUSION-JUNCTION RECTIFIERS;Modern Physics Letters B;2010-04-10
4. Decreasing of Depth of Implanted-Junction Rectifier in Semiconductor Heterostructure by Optimized Laser Annealing;Journal of Computational and Theoretical Nanoscience;2010-01-01
5. RETRACTED: Redistribution of dopant in a multilayer structure during annealing of radiation defects by laser pulses for production an implanted-junction rectifier;Physics Letters A;2008-06
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