Effect of Z1/2, EH5, and Ci1 deep defects on the performance of n-type 4H-SiC epitaxial layers Schottky detectors: Alpha spectroscopy and deep level transient spectroscopy studies-Reference-Cited by-同舟云学术

Effect of Z1/2, EH5, and Ci1 deep defects on the performance of n-type 4H-SiC epitaxial layers Schottky detectors: Alpha spectroscopy and deep level transient spectroscopy studies

Published:2014-06-14 Issue:22 Volume:115 Page:224504
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Mannan Mohammad A.,Chaudhuri Sandeep K.,Nguyen Khai V.,Mandal Krishna C.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4883317

Reference38 articles.

1. Silicon carbide and its use as a radiation detector material

2. Parameters required to simulate electric characteristics of SiC devices for n-type 4H–SiC

3. Enhancement and control of carrier lifetimes in p-type 4H-SiC epilayers

4. Development of a silicon carbide radiation detector

5. Demonstration of an SiC neutron detector for high-radiation environments

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