0.6ST-0.4NBT thin film with low level Mn doping as a lead-free ferroelectric capacitor with high energy storage performance-Reference-Cited by-同舟云学术

0.6ST-0.4NBT thin film with low level Mn doping as a lead-free ferroelectric capacitor with high energy storage performance

Published:2018-02-26 Issue:9 Volume:112 Page:093902
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Zhang Yulei¹,Li Weili¹²,Qiao Yulong¹,Zhao Yu¹³,Wang Zhenyu¹,Yu Yang¹,Xia Hetian¹,Li Ze¹,Fei Weidong¹⁴

Affiliation:

1. School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, People's Republic of China

2. National Key Laboratory of Science and Technology on Precision Heat Processing of Metals, Harbin Institute of Technology, Harbin 150001, People's Republic of China

3. Research Center of Basic Space Science, Harbin Institute of Technology, Harbin 150001, People's Republic of China

4. State key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin 150001, People's Republic of China

Funder

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5020679

Reference41 articles.

1. BiFeO3–SrTiO3 thin film as a new lead-free relaxor-ferroelectric capacitor with ultrahigh energy storage performance

2. Relaxor-ferroelectric superlattices: high energy density capacitors

3. High-Energy Storage Performance of (Pb0.87 Ba0.1 La0.02 )(Zr0.68 Sn0.24 Ti0.08 )O3 Antiferroelectric Ceramics Fabricated by the Hot-Press Sintering Method

4. Polarization of antiferroelectric ceramics for pulse capacitors under transient electric field

5. Enhanced energy storage density by inducing defect dipoles in lead free relaxor ferroelectric BaTiO3-based ceramics

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