Effect of internal field on the high resistance state retention of unipolar resistance switching in ferroelectric vanadium doped ZnO-Reference-Cited by-同舟云学术

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Effect of internal field on the high resistance state retention of unipolar resistance switching in ferroelectric vanadium doped ZnO

Published:2017-04-03 Issue:14 Volume:110 Page:143502
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Wu Changjin¹^ORCID,Jia Yuefa¹,Shin Yeong Jae²³,Noh Tae Won²³^ORCID,Chae Seung Chul⁴,Liu Chunli¹

Affiliation:

1. Department of Physics and Oxide Research Center, Hankuk University of Foreign Studies, Yongin 17035, South Korea

2. Center for Correlated Electron Systems, Institute for Basic Science (IBS), Seoul 08826, South Korea

3. Department of Physics and Astronomy, Seoul National University, Seoul 08826, South Korea

4. Department of Physics Education, Seoul National University, Seoul 08826, South Korea

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4979598

Reference42 articles.

1. Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

2. A comprehensive review of ZnO materials and devices

3. Coexistence of the bipolar and unipolar resistive switching behaviors in vanadium doped ZnO films

4. Effect of Co doping on unipolar resistance switching in Pt/Co:ZnO/Pt structures

5. Ferromagnetism of ZnO and GaN: A Review

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1. High-Performance Memristive Synapse Composed of Ferroelectric ZnVO-Based Schottky Junction;Nanomaterials;2024-03-11

2. Enhancement of optical, dielectric and transport properties of (Sm, V) co-doped ZnO system and structure-property correlations;Ceramics International;2021-04

3. Self-rectifying resistance switching memory based on a dynamic p–n junction;Nanotechnology;2020-12-02

4. Confining vertical conducting filament for reliable resistive switching by using a Au-probe tip as the top electrode for epitaxial brownmillerite oxide memristive device;Scientific Reports;2019-02-04

5. Multilevel resistive and magnetization switching in Cu/CoFe2O4/Pt device: Coexistence of ionic and metallic conducting filaments;Applied Physics Letters;2018-12-10

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