Optical determination of Si conduction‐band nonparabolicity
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.345386
Reference28 articles.
1. Cyclotron Resonance in Uniaxially Stressed Silicon. II. Nature of the Covalent Bond
2. Nonparabolicity and intrinsic carrier concentration in Si and Ge
3. Determination of Free Electron Effective Mass of n‐Type Silicon
4. Infrared Absorption in Heavily Doped n-Type Si
5. Change of the electron effective mass in extremely heavily doped n-type Si obtained by ion implantation and laser annealing
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4. Temperature dependence of silicon carrier effective masses with application to femtosecond reflectivity measurements;Journal of the Optical Society of America B;2002-05-01
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