Time-dependent diffusivity of boron in silicon oxide and oxynitride
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.123425
Reference15 articles.
1. The effects of boron penetration on p/sup +/ polysilicon gated PMOS devices
2. Thickness dependence of boron penetration through O/sub 2/- and N/sub 2/O-grown gate oxides and its impact on threshold voltage variation
3. Highly suppressed boron penetration in NO-nitrided SiO/sub 2/ for p/sup +/-polysilicon gated MOS device applications
4. Boron diffusion in SiO2 based dielectric thin layers
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