Gate control of ferromagnetic insulating phase in lightly-doped La0.875Sr0.125MnO3−δ film
Author:
Affiliation:
1. Beijing National Laboratory for Condensed Matter Physics and State Key Laboratory of Magnetism, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
Funder
National Natural Science Foundation of China (NSFC)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4942803
Reference36 articles.
1. Magnetism and the charge order transition in lightly dopedLa1−xSrxMnO3
2. Interplay between Charge Order, Magnetism, and Structure inLa0.875Sr0.125MnO3
3. Orbital order induced ferromagnetic insulating properties
4. Polaron Ordering in Low-DopingLa1−xSrxMnO3
5. Transition between Two Ferromagnetic States Driven by Orbital Ordering inLa0.88Sr0.12MnO3
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